| 摘要 |
AN EPOXY RESIN COMPOSITION FOR SEMICONDUCTOR ENCAPSULATION WHICH DOES NOT CAUSE THE CHIP TILTING ATTRIBUTABLE TO RESIN FLOW DURING RESIN ENCAPSULATION, SUCH AS SEMICONDUCTOR ELEMENT SHIFTING AND GOLD WIRE DEFORMATION, AND IS CAPABLE OF YIELDING HIGHLY RELIABLE SEMICONDUCTOR DEVICES. THE EPOXY RESIN COMPOSITION FOR SEMICONDUCTOR ENCAPSULATION COMPRISES AN EPOXY RESIN, A PHENOLIC RESIN, A HARDENING ACCELERATOR, AND AN INORGANIC FILLER, AND HAS THE FOLLOWING PROPERTIES (X) TO (Z): (X) THE VISCOSITY THEREOF AS MEASURED WITH A FLOW TESTER AT 175 °C IS FROM 5 TO 50 NS/M2 (50 TO 500 P); (Y) THE MINIMUM MELT VISCOSITY THEREOF AS DETERMINED FROM THE TEMPERATURE DEPENDENCY OF VISCOSITY THEREOF AS MEASURED WITH A DYNAMIC VISCOELASTIC METER AT A SHEAR RATE OF 5 (L/S) IS 1 X 104 NS/M2 (1 X 105 P) OR LOWER; AND (Z) THE RATIO OF THE VISCOSITY THEREOF AS MEASURED AT 90°C (ZL) TO THAT AS MEASURED AT 110°C (Z2) BOTH WITH A DYNAMIC VISCOELASTIC METER AT A SHEAR RATE OF 5 (1/S), (ZL/Z2), IS 2.0 OR HIGHER. |
