COMPOSITION FOR POLISHING

摘要

[PROBLEMS] To provide an abrasive material for use in polishing for planarization in semiconductor device production steps and for use in a step for the separation of semiconductor device elements. [MEANS FOR SOLVING PROBLEMS] The composition for polishing comprises an ingredient (A) which is a water-soluble organic compound having a carboxy group or a salt thereof and an ingredient (B) which is an aqueous sol of cerium oxide particles obtained by burning a cerium compound by holding it in at least two different burning temperature ranges and wet-pulverizing the resultant cerium oxide powder until it comes to have a ratioof [the average particle diameter (b1) as measured by laser diffractometry]/[the average particle diameter (b2) as determined from specific surface area measured by the gas adsorption method] in the range of either 1-4 or 15-40. The ingredient (A) may be ammonium acrylate, ammonium methacrylate, an amino acid, or an amino acid derivative. The ingredient (B) may be obtained by wet-pulverizing the cerium oxide powder obtained from a cerium compound through a burning step which has a burning temperature range of 200-350°C and a burning temperature range of 400-550°C or 700-850°C.