SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To make thinner a gate insulator without reducing the breakdown voltage of the gate or to increase the breakdown voltage of the gate without thickening the gate insulator in a FET having a trench gate structure. SOLUTION: In a semiconductor device including the FET having the trench gate structure, an electric field relaxation section is provided at the end of the trench gate. Thereby the electric field relaxation section which is provided at the end of the gate can prevent the generation of a local high electric field, so that the gate insulator can be made thinner without reducing the breakdown voltage of the gate or the breakdown voltage of the gate can be increased without thickening the gate insulator. COPYRIGHT: (C)2006,JPO&NCIPI