发明名称 |
METHODS FOR FORMING SUPER-STEEP DIFFUSION REGION PROFILES IN MOS DEVICES AND RESULTING SEMICONDUCTOR TOPOGRAPHIES |
摘要 |
Methods for fabricating diffusion regions having steep concentration profiles within MOS devices while minimizing junction capacitance degradation are provided. In particular, methods are provided which include patterning a gate structure upon a semiconductor substrate and subsequently etching a recess in exposed portions of the substrate. In some cases, the method includes forming a first dopant region within the exposed portions prior to etching the recess. The method may additionally or alternatively include implanting a second set of dopants into portions of the semiconductor substrate bordering the recess. In either case, the method includes growing an epitaxial layer within the recess and implanting a third set of dopants into the semiconductor topography to form a second dopant region extending to a depth at least within the epitaxial layer. A resulting semiconductor topography includes a source/drain region comprising an upper portion consisting essentially of first dopants of a first conductivity type. |
申请公布号 |
WO2005104209(A1) |
申请公布日期 |
2005.11.03 |
申请号 |
WO2005US08177 |
申请日期 |
2005.03.08 |
申请人 |
CYPRESS SEMICONDUCTOR CORP.;NAHM, JEONG-YEOP;PUCHNER, HELMUT;POHLAND, OLIVER;XU, YANGZHONG |
发明人 |
NAHM, JEONG-YEOP;PUCHNER, HELMUT;POHLAND, OLIVER;XU, YANGZHONG |
分类号 |
H01L21/336;H01L21/76;H01L21/8238;H01L29/10;H01L29/739;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|