METHOD FOR FORMING DUAL-DAMASCENE PATTERN IN A SEMICONDUCTOR DEVICE,申请号KR20030061074-传众专利搜索

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发明名称	METHOD FOR FORMING DUAL-DAMASCENE PATTERN IN A SEMICONDUCTOR DEVICE
摘要
申请公布号	KR100523655(B1)	申请公布日期	2005.10.24
申请号	KR20030061074	申请日期	2003.09.02
申请人		发明人
分类号	H01L21/28;(IPC1-7):H01L21/28	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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