| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a slurry for polishing which has less of the conventional defects and is improved which is used for chemical mechanical polishing (CMP) to be used for manufacturing a semiconductor integrated circuit, and to provide a polishing method using the same. <P>SOLUTION: The slurry for polishing has a composition which uses colloidal silica instead of the conventional aerosol silica for the material of an abrasive, and uses a corrosion inhibitor while not using an oxidant which has been conventionally used. For wafer interconnection fabrication, a damask inlay method is employed. In the polishing method, a damask inlay structure and a polishing pad are prepared. The slurry is applied on the interface between the structure and the pad, and polishing is performed by a chemical mechanical polishing apparatus using the polishing parameters of the apparatus to remove at least part of a metal layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
