| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method, a measuring device and a manufacturing device for a semiconductor device capable of highly sensitively and simply confirming the fluctuation of composition of a metal layer. SOLUTION: The manufacturing method of semiconductor device comprises a process for forming a copper plate layer (metal layer) 41 on a wafer (silicon substrate) W, a process for producing a copper silicide layer (metal silicide layer) 42 by heating the wafer W to react the copper plate layer 41 with silicon, a process for measuring the physical constant of the copper silicide layer 42, and a process for confirming whether the composition of constituting elements of the copper plate layer 41 is fluctuated from regulations or not by comparing the measured physical constant with a reference value. COPYRIGHT: (C)2006,JPO&NCIPI
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