| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method capable of manufacturing a capacitance type pressure sensor having an excellent temperature characteristic and diaphragms with various thicknesses, by a simple process with an excellent yield, and a servo type sensor free from an error caused by vibration, and having an excellent dynamic characteristic. SOLUTION: This manufacturing method is characterized by including a process for forming a groove on a silicon layer of an SOI substrate comprising the silicon layer, a buried oxide layer and a base silicon layer, a process for forming a pressure reference chamber by bonding the first insulator substrate equipped with a capacity electrode to the silicon layer so that the capacity electrode is stored in the groove, a process for removing by etching the whole base silicon layer, a process for forming a diaphragm by etching the silicon layer, and a process for bonding the silicon layer to the second insulator substrate equipped with a servo electrode. This sensor has a characteristic wherein the silicon layer has the thickness of 15-200μm or the diaphragm and the servo electrode have a flat structure. COPYRIGHT: (C)2006,JPO&NCIPI
|
