| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a low resistance and thin film silicide layer in a source/drain region, and also to provide a manufacturing method thereof. SOLUTION: The semiconductor device 100 comprises: a semiconductor layer 10; a gate insulating layer 20 provided at the upper part of the semiconductor layer 10; a gate electrode 22 provided at the upper part of the gate insulating layer 20; an impurity layer 26 to form a source region or a drain region provided at least on the semiconductor layer 10; a silicide layer 40 provided at the upper part of the source region or drain region; and a silicide forming reaction controlling region 30 provided within the impurity layer 26. COPYRIGHT: (C)2005,JPO&NCIPI
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