| 摘要 |
A method for manufacturing a liquid crystal display which reduces the number of photolithography processes is provided. The method includes the steps of forming a gate electrode (31,33) and a gate pad (31) by depositing a first metal film and a second metal film on a substrate of a TFT area and a gate-pad connecting area, respectively, in the described order, by a first photolithography process, forming an insulating film (35) on the entire surface of the substrate on which the gate electrode and the gate pad are formed, forming a semiconductor film pattern on the insulating film of the TFT area by a second photolithography process, forming a source electrode/drain electrode and pad electrode composed of a third metal film (41) using a third photolithography process in the TFT portion and pad portion, respectively, forming a passivation film pattern (43) which exposes a portion of the drain electrode, a portion of the gate pad, and a portion of the pad electrode by a fourth photolithography process, exposing the first metal film by etching the second metal film which constitutes the gate pad using the passivation film pattern as a mask, and forming a pixel electrode (47) connected to the drain electrode of the TFT area for connecting the gate pad of the gate-pad connecting area to the pad electrode of the pad area using a fifth photolithography process. Therefore, it is possible to reduce the number of photolithography processes, to improve the manufacturing yield, and to supress growth of a hillock of an Al film. <IMAGE> |
