| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a thin multi-stage chip laminate structure which is high in the degree of freedom of wiring connection. <P>SOLUTION: This semiconductor device 100 is provided with a substrate 102; a lower semiconductor chip 104 formed at the upper part of the substrate 102; an upper conductor chip 106 formed at the upper part of the lower semiconductor chip 104; and a silicon spacer 108 with re-wiring formed between the lower semiconductor chip 104 and the upper semiconductor chip 106, and has an extended part extended to the outside of the outer peripheral edge of the lower semiconductor chip 104. In this case, second electrode pads 118a and 118b formed at the extended part of the silicon spacer 108 with re-wiring and first electrodes 114a and 114b formed at the lower semiconductor chip 104 are connected by wiring including through-electrodes 128a and 128b of the silicon spacer 108 with re-wiring. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
