发明名称 Verfahren zur Korrektur eines Maskenmusters
摘要 A mask pattern correction method able to easily eliminate a fine step difference generated after line width correction of a pattern is provided. This is made a correction method of a mask pattern comprising a step of finding a difference between a graphic obtained by oversizing a pattern including a corner and temporary regions formed by shifting the pattern edge; a step of extracting an edge not contacting the line width corrected figure (region designation edge) from the difference; a step of forming a rectangle having the region designation edge as one side; and a step of deleting the rectangle from the difference to obtain a pattern burying the fine step difference.
申请公布号 DE10393430(T5) 申请公布日期 2005.09.15
申请号 DE2003193430T 申请日期 2003.09.30
申请人 SONY CORP., TOKIO/TOKYO 发明人 OGAWA, KAZUHISA
分类号 G03F1/36;G03F1/68;H01L21/027 主分类号 G03F1/36
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