SEMICONDUCTOR MODULATOR ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor modulator element and its manufacturing method which is manufacturable at a high yield even when a greatly warped substrate is used. SOLUTION: The semiconductor modulator element formed on a semiconductor substrate 1 having a diameter of 50 mm and a warp of 10μm or more is composed of a field effect transistor having a dual gate structure having a semiconductor-made channel 2, a source electrode 3 and a drain electrode 4 ohmically contacted with the channel 2, and a first and second gate electrodes 5, 6 formed on the channel 2. COPYRIGHT: (C)2005,JPO&NCIPI