发明名称 Back-biased face target sputtering based memory
摘要 Systems and methods are disclosed for forming memory arrays on a substrate in an air-tight chamber in which an inert gas is admittable and exhaustible; a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region therebetween; a pair of magnets respectively disposed adjacent to said target plates such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field of said plasma region between said target plates; a substrate holder disposed adjacent to said plasma region, said substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited; and a back-bias power supply coupled to the substrate holder.
申请公布号 US2005183945(A1) 申请公布日期 2005.08.25
申请号 US20050105000 申请日期 2005.04.13
申请人 NAGASHIMA MAKOTO 发明人 NAGASHIMA MAKOTO
分类号 C23C14/35;H01J37/34;(IPC1-7):C23C14/32 主分类号 C23C14/35
代理机构 代理人
主权项
地址