| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a dividing method of wafer for forming a deteriorated layer in a wafer along predetermined division lines, using a pulse laser beam, dividing the wafer into individual chips along the deteriorated layer and picking up the divided chips. <P>SOLUTION: The method for dividing a wafer 2 along predetermined division lines 21 formed in lattice on the surface comprises a step for sticking the rear surface of the wafer to a dicing tape 30 fixed to an annular frame, a step of forming a deteriorated layer 210 in the wafer along the predetermined division lines by irradiating the wafer with a pulse laser beam along the predetermined division lines; a step of dividing the wafer into individual chips along the predetermined division lines by imparting an external force along the predetermined division lines of the wafer where the deteriorated layer is formed; a step of enlarging the interval between the chips by spreading the dicing tape to which the wafer is sticking, and a step of picking up each chip. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
