SEMICONDUCTOR DEVICE

摘要

To improve recording/holing reliability in the case of operating a phase change memory at a low voltage and at a high temperature, or leaving it as it is. A high-speed operation is performed with a read voltage above set and reset voltages, and after a read operation, the status prior to the read operation is rewritten. That is, a so-called destructive read is performed. Alternatively, a so-called "OR-cell", in which a plurality of cells are used to record 1-bit information, is used to improve the reliability in the case of operating a phase change memory at a high temperature or leaving it as it is. There are used circuit arrangement and operation scheme required by the phase change memory using the destructive read and OR-cell.