发明名称 |
SEMICONDUCTOR DEVICE AND PROCESS FOR FABRICATING THE SAME |
摘要 |
An active groove filled region 23a is kept at a portion of an active groove 22a connecting to an embedded region 24 positioned below a gate groove 83. The active groove filled region 23a connects to a source electrode film 58a so as to have the same electric potential as a source region 64. When a reverse bias is applied between a base region 32a and a conductive layer 12, a reverse bias is also applied between the embedded region 24 and the conductive layer 12; and therefore, depletion layers spread out together and a withstanding voltage is increased. <IMAGE>
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申请公布号 |
EP1557888(A1) |
申请公布日期 |
2005.07.27 |
申请号 |
EP20030748640 |
申请日期 |
2003.10.01 |
申请人 |
SHINDENGEN ELECTRIC MANUFACTURING COMPANY, LIMITED |
发明人 |
KUROSAKI, TORU;KUNORI, SHINJI;KITADA, MIZUE;OHSHIMA,KOSUKE;SHISHIDO, H. |
分类号 |
H01L29/78;H01L21/331;H01L21/336;H01L29/06;H01L29/08;H01L29/739;H01L29/872;(IPC1-7):H01L29/78;H01L29/47 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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