| 摘要 |
A semiconductor device comprises a semiconductor layer of a first conductivity type ( 2 ), a base region ( 3 ) formed proximal to the semiconductor layer, a source region ( 4 ) selectively placed over the base region, trenches (T), a gate insulating layer ( 7 ) and a gate electrode ( 6 ) provided on an inner wall of each of the trenches, and a source electrode ( 9 ) connected to the source region. The source region is higher in impurity concentration in a contact ( 4 a) with the source electrode than in a contact with the gate insulating layer, and it is also higher in impurity concentration in the contact ( 4 a) with the source electrode than in a contact with the base region.
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