发明名称 |
Method of forming fin field effect transistor |
摘要 |
According to some embodiments, a fin type active region is formed under an exposure state of sidewalls on a semiconductor substrate. A gate insulation layer is formed on an upper part of the active region and on the sidewalls, and a device isolation film surrounds the active region to an upper height of the active region. The sidewalls are partially exposed by an opening part formed on the device isolation film. The opening part is filled with a conductive layer that partially covers the upper part of the active region, forming a gate electrode. Source and drain regions are on a portion of the active region where the gate electrode is not. The gate electrode may be easily separated and problems causable by etch by-product can be substantially reduced, and a leakage current of channel region and an electric field concentration onto an edge portion can be prevented.
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申请公布号 |
US2005153490(A1) |
申请公布日期 |
2005.07.14 |
申请号 |
US20040014212 |
申请日期 |
2004.12.15 |
申请人 |
YOON JAE-MAN;JIN GYO-YOUNG;KANG HEE-SOO;PARK DONG-GUN |
发明人 |
YOON JAE-MAN;JIN GYO-YOUNG;KANG HEE-SOO;PARK DONG-GUN |
分类号 |
H01L21/336;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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