| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode device preventing various problems generated by an etching by eliminating the need for the etching of a semiconductor material and exposing an n-type GaN. <P>SOLUTION: An n-type GaN layer is grown on the surface of a substrate, and silicon oxide is grown on the surface of the n-type GaN layer and an n-type GaN layer in a mesa region is exposed by a lithographic process. A light-emitting diode structure is grown in the mesa region by an MOCVD to the wafer, a structure of a pn identical surface is formed by the characteristics of a gallium nitride epitaxial layer selectively grown in a region, and an electrode is manufactured on the structure, thus manufacturing the light-emitting diode device. The etching is made unnecessary and the structure of the pn identical surface is completed, and the GaN light-emitting diode device is manufactured simply. The problems of the unevenness of an etching depth and the excess roughness of the surface due to the etching and a defective conductivity and a leakage current due to an etching damage are avoided. Silicon oxide is used as a diffusion layer, and a light emitted by a light-emitting layer modifies a beam path by the diffusion of the diffusion layer by the diffusion effect of silicon oxide and an internal total reflection is reduced, thus attaining an excellent luminous power conversion efficiency. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
