发明名称 Plating apparatus, plating method, and manufacturing method of semiconductor device
摘要 According to an embodiment of the present invention, a plating apparatus, including: a plating solution tank configured to store a plating solution; a holder configured to hold a substrate on which a seed layer is formed in said plating solution tank; a first anode disposed in said plating solution tank, composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer, and electrically connectable to the seed layer of the substrate held by said holder; and a second anode disposed in said plating solution tank, capable of applying a voltage between the seed layer of the substrate held by holder, is provided.
申请公布号 US2005145500(A1) 申请公布日期 2005.07.07
申请号 US20040998970 申请日期 2004.11.30
申请人 TOYODA HIROSHI;MATSUI YOSHITAKA;YAHIRO KAZUYUKI;YAMABE JUNSEI;MISHIMA SHIRO;NAGAMATSU TAKAHITO 发明人 TOYODA HIROSHI;MATSUI YOSHITAKA;YAHIRO KAZUYUKI;YAMABE JUNSEI;MISHIMA SHIRO;NAGAMATSU TAKAHITO
分类号 C25D5/02;C25D5/18;C25D7/12;C25D17/00;C25D17/10;C25D21/00;H01L21/00;H01L21/288;H01L21/768;(IPC1-7):C25D5/02 主分类号 C25D5/02
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