发明名称 |
Plating apparatus, plating method, and manufacturing method of semiconductor device |
摘要 |
According to an embodiment of the present invention, a plating apparatus, including: a plating solution tank configured to store a plating solution; a holder configured to hold a substrate on which a seed layer is formed in said plating solution tank; a first anode disposed in said plating solution tank, composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer, and electrically connectable to the seed layer of the substrate held by said holder; and a second anode disposed in said plating solution tank, capable of applying a voltage between the seed layer of the substrate held by holder, is provided.
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申请公布号 |
US2005145500(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20040998970 |
申请日期 |
2004.11.30 |
申请人 |
TOYODA HIROSHI;MATSUI YOSHITAKA;YAHIRO KAZUYUKI;YAMABE JUNSEI;MISHIMA SHIRO;NAGAMATSU TAKAHITO |
发明人 |
TOYODA HIROSHI;MATSUI YOSHITAKA;YAHIRO KAZUYUKI;YAMABE JUNSEI;MISHIMA SHIRO;NAGAMATSU TAKAHITO |
分类号 |
C25D5/02;C25D5/18;C25D7/12;C25D17/00;C25D17/10;C25D21/00;H01L21/00;H01L21/288;H01L21/768;(IPC1-7):C25D5/02 |
主分类号 |
C25D5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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