| 摘要 |
An interconnection structure includes an interlevel insulating film, made of organic-containing silicon <?delete-start id="DEL-S-00001" date="20050705" ?>di<?delete-end id="DEL-S-00001" ?> oxide, between lower- and upper-level metal interconnects. A phenyl group, bonded to a silicon atom, is introduced into silicon <?delete-start id="DEL-S-00002" date="20050705" ?>di<?delete-end id="DEL-S-00002" ?> oxide in the organic-containing silicon <?delete-start id="DEL-S-00003" date="20050705" ?>di<?delete-end id="DEL-S-00003" ?> oxide.
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