发明名称 |
Method of making small transistor lengths |
摘要 |
Transistor gate linewidths can be made to be effectively smaller by etching a notch at the bottom of the gate to reduce the effective linewidth. This can be done by etching at a layer interface, such as a silicon-germanium interface in an over-etch step.
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申请公布号 |
US6914009(B2) |
申请公布日期 |
2005.07.05 |
申请号 |
US20010850853 |
申请日期 |
2001.05.07 |
申请人 |
LILL THORSTEN B.;KRETZ JITSKE |
发明人 |
LILL THORSTEN B.;KRETZ JITSKE |
分类号 |
H01L21/28;H01L21/311;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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