| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide gate controlled diode memory cells having charging capability. <P>SOLUTION: The gate controlled diode memory cell includes one or more transistors, such as field effect transistors ("FETs"), and a gate controlled diode in signal communication with the FETs, and the gate of the gate controlled diode is in signal communication with the source of a first FET, wherein the gate of the gate controlled diode forms one terminal of the storage cell and the source of the gate controlled diode forms another terminal of the storage cell, the drain of the first FET being in signal communication with a bitline ("BL") and the gate of the first FET being in signal communication with a write wordline ("WLw"), and the source of the gate controlled diode being in signal communication with a read wordline ("WLr"). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
