| 摘要 |
Disclosed herein are a gallium nitride semiconductor LED (light emitting device) and a method of manufacturing the same, which reduces defects, such as Ga vacancies and dislocations caused by lattice mismatching, with Al doping, so that electrical and an optical properties are enhanced. The gallium nitride semiconductor LED comprises a substrate for growing a GaN semiconductor material, an n-type GaN clad layer formed on the substrate and doped with Al, an active layer having a quantum well structure formed on the n-type GaN clad layer, and a p-type GaN clad layer formed on the active layer. By the above method, good quality crystal growth is ensured with a low cost and the GaN semiconductor LED of excellent electrical and optical properties is provided.
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