发明名称 Cross-linking polymer for organic anti-reflective coating, organic anti-reflective coating composition comprising the same and method for forming photoresist pattern using the same
摘要 A cross-linking polymer for an organic anti-reflective coating that is able to improve the uniformity of an ultra-fine photoresist pattern formed using a photolithography process and an ArF light source with 194 nm wavelength. Organic anti-reflective coatings including the same and a method for forming a photoresist pattern using the same are also disclosed. The disclosed cross-linking polymer is capable of preventing scattered reflection from a bottom film layer, eliminating standing wave effect due to alteration of thickness of the photoresist film, and increasing uniformity of the thickness of photoresist pattern. At the same time, the disclosed cross-linking pattern increases the etching velocity of the organic anti-reflective coating so that it can be easily removed.
申请公布号 US2005142481(A1) 申请公布日期 2005.06.30
申请号 US20040989221 申请日期 2004.11.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG JAE-CHANG;BOK CHEOL-KYU;MOON SEUNG-CHAN;SHIN KI-SOO
分类号 G03F7/11;C08F8/00;C08F16/34;C08F216/14;C08F216/34;G03C1/76;G03F7/004;G03F7/027;G03F7/039;G03F7/09;G03F7/20;H01L21/00;H01L21/027;(IPC1-7):G03C1/76 主分类号 G03F7/11
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