发明名称 |
Method of forming silicon on insulator wafers |
摘要 |
A method is provided for fabricating an SOI water. This may involve forming a silicon substrate and implanting oxygen into the substrate. Damaged portions of the implanted silicon may be healed/cured by CMP or anneal, for example. An epi layer may then be deposited over the healed/cured regions of the substrate. The substrate may then be annealed to form an insulative layer. The wafer may be thinned to provide the proper thickness of the epi layer.
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申请公布号 |
US6911380(B2) |
申请公布日期 |
2005.06.28 |
申请号 |
US20020199123 |
申请日期 |
2002.07.22 |
申请人 |
INTEL CORPORATION |
发明人 |
TOLCHINSKY PETER G.;YABLOK IRWIN;SHAHEEN MOHAMAD A. |
分类号 |
H01L21/762;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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