| 摘要 |
After thermally oxidizing a substrate in which a trench has been formed, a first insulating film having a higher film stress with a thickness of 30 to 80 nm is formed thereon through a CVD process under a high output power at a high temperature. Next, the substrate 1 is subjected to a heating treatment so as to allow defect areas to occur in the vicinity of a lower edge portion of the trench. Next, the trench is buried and an insulating film having a film stress that is lower than that of the first insulating film is deposited thereon, and, after a heating treatment, the insulating film is polished to form an embedded insulating film. Since stresses that are imposed from the insulating film in the post processes are concentrated on the defect areas, it becomes possible to prevent defect areas from occurring in the vicinity of the upper face of the substrate through which electric currents flow during operations of the semiconductor element.
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