| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for depositing an atomic layer, which avoids the undesirable condensation of a precursor gas, and minimizes an amount of the waste precursor gas or enhances a degree of uniformity for a thickness of an adsorption layer, and to provide an apparatus therefor. SOLUTION: This depositing method comprises sending the precursor gas to a process reactor chamber by using only a pressure gradient, without using a pump. The depositing method comprises closing a valve (24) between a first ancillary chamber (20) and the process reactor chamber (10), and closing a valve (26) between a second ancillary chamber (22) and the process reactor chamber (10), to decrease a pressure in the process reactor chamber; opening the valve (24) to pass a first precursor gas from the first ancillary chamber (20) to the process reactor chamber under the pressure gradient, and closing the valve (24) to decrease the pressure in the process reactor chamber; and opening the valve (26) to pass a second precursor gas from the second ancillary chamber (22) to the process reactor chamber under the pressure gradient, and closing the valve (26). COPYRIGHT: (C)2005,JPO&NCIPI
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