A quantum cascade laser has an emission wavelength below 3.4 mu m and above 1.5 mu m. The semiconductor multi-layer structure has a cup layer of indium gallium arsenide (InGaAs) and a barrier layer of aluminum arsenic antimonide (AlAsSb). The cup layer thickness is in the optically active range of 1 to 4 nm.
申请公布号
EP1536531(A1)
申请公布日期
2005.06.01
申请号
EP20040027605
申请日期
2004.11.20
申请人
FORSCHUNGSZENTRUM ROSSENDORF E.V.
发明人
DEKORSY, THOMAS, DR.;HELM, MANFRED, PROF. DR.;GEORGIEV, NIKOLAI, DR.;KUENZEL, HARALD, DR.
