发明名称 |
Methods of forming semiconductor devices having multiple channel MOS transistors and related intermediate structures |
摘要 |
In a method of manufacturing a semiconductor device, a preliminary active pattern including gate layers and channel layers is formed on a substrate. The gate layers and the channel layers are alternatively stacked. A hard mask is formed on the preliminary active pattern. The preliminary active pattern is partially etched using the hard mask as an etching mask to expose a surface of the substrate. The etched preliminary active pattern is trimmed to form an active channel pattern having a width less than a lower width of the hard mask. Source/drain layers are formed on exposed side faces of the active channel pattern and the surface. The gate layers are selectively etched to form tunnels. A gate encloses the active channel pattern and filling the tunnels. Related intermediate structures are also disclosed.
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申请公布号 |
US2005112851(A1) |
申请公布日期 |
2005.05.26 |
申请号 |
US20040974410 |
申请日期 |
2004.10.27 |
申请人 |
LEE SUNG-YOUNG;KIM SUNG-MIN;PARK DONG-GUN;OH CHANG-WOO;YUN EUN-JUNG |
发明人 |
LEE SUNG-YOUNG;KIM SUNG-MIN;PARK DONG-GUN;OH CHANG-WOO;YUN EUN-JUNG |
分类号 |
H01L21/00;H01L21/336;H01L29/78;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
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