METHOD FOR FORMING GATE OF FLASH MEMORY DEVICE,申请号KR20030076587-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	METHOD FOR FORMING GATE OF FLASH MEMORY DEVICE
摘要
申请公布号	KR20050041420(A)	申请公布日期	2005.05.04
申请号	KR20030076587	申请日期	2003.10.31
申请人	HYNIX SEMICONDUCTOR INC.	发明人	JANG, MIN SIK
分类号	H01L21/8247;(IPC1-7):H01L21/824	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

您可能感兴趣的专利

HYDRAULIC SHOCK ABSORBER

JOINT STRUCTURE

CHAIN TENSIONER

OPERATING MECHANISM

AXIAL ONE-WAY CLUTCH WITH AXIAL SPACER

SPACER SCREW AND METHOD OF MANUFACTURING SPACER SCREW

ALIGNMENT MECHANISM, ALIGNMENT METHOD AND COMRADE RECOGNIZING METHOD

ARTICLE STORAGE SHELF

CUSHION STRUCTURE OF FLUID PRESSURE CYLINDER

ELECTRICALLY CONTROLLED THROTTLE DEVICE

REDUCTION GEAR AND VEHICULAR ACTIVE STABILIZER DEVICE

PAD TYPE JOURNAL BEARING DEVICE

AIR COMPRESSOR AND METHOD FOR USING AIR COMPRESSOR

ENGINE BREATHER DEVICE

SCROLL FLUID MACHINE

CONTROL DEVICE FOR INTERNAL COMBUSTION ENGINE

SPARK IGNITION TYPE INTERNAL COMBUSTION ENGINE

SCROLL COMPRESSOR

SAFETY MECHANISM OF RADIATOR CAP