发明名称 |
Trench isolation employing a high aspect ratio trench |
摘要 |
An isolation trench formed in a semiconductor substrate and is filled with at least one insulating liner layer that is deposited along sidewalls and a bottom region of the isolation trench and with at least one silicon liner layer that is deposited atop the insulating liner layer. An upper portion of the insulating liner layers are removed, and the silicon liner layers are removed. A remaining portion of the trench is filled with another insulating layer.
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申请公布号 |
US2005079730(A1) |
申请公布日期 |
2005.04.14 |
申请号 |
US20030683668 |
申请日期 |
2003.10.10 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
BEINTNER JOCHEN;KNORR ANDREAS |
分类号 |
H01L21/31;H01L21/76;H01L21/762;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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