SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To reduce the cost of a semiconductor device such as an indicating device, an ID tag and a sensor by using an organic TFT of a bottom contact type for a switching element. SOLUTION: A semiconductor layer of a bottom contact type organic TFT is formed of a polycrystalline material. A taper width in the channel lengthwise direction of a source-drain electrode is made shorter than the mean particle diameter of a semiconductor crystal which grows on the source-drain electrode. On, the shape of the side surface of the channel side of the source-drain electrode of the bottom contact type organic TFT is formed so as to be a convex shape relative to a substrate surface. On, an organic compound layer which is different from the semiconductor layer is interposed between the source-drain electrode and the semiconductor layer of the bottom contact type organic TFT at the thickness of at least 1Åand at most 10Å. COPYRIGHT: (C)2005,JPO&NCIPI