| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a heterojunction bipolar transistor, in which base-emitter electrical continuity voltage can be controlled. SOLUTION: By growing GaAs<SB>x</SB>Sb<SB>1-x</SB>material (x ranges from 0.0 to 1.0), or In<SB>w</SB>Ga<SB>1-w</SB>As<SB>z</SB>N<SB>1-z</SB>material so as to be arranged in a predetermined sequence, a new material is formed and is used as the base for the heterojunction bipolar transistor. Since the energy gap of the base material is related to the composition, the thickness and the system of each layer material, by changing the composition of GaAs<SB>x</SB>Sb<SB>1-x</SB>material or In<SB>x</SB>Ga<SB>1-x</SB>As<SB>y</SB>N<SB>1-y</SB>material, or the arrangement system of GaAs material, GaAs<SB>x</SB>Sb<SB>1-x</SB>material, and In<SB>x</SB>Ga<SB>1-x</SB>As<SB>y</SB>N<SB>1-y</SB>material and the thickness of each layer material and changing the energy gap of the base material, under arbitrarily selected doping concentration, the base-emitter electrical continuity voltage (Vbe) of the heterojunction bipolar transistor is controlled. COPYRIGHT: (C)2005,JPO&NCIPI
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