| 发明名称 |
MICROLITHOGRAPHY METHOD USING A MASK WITH CURVED SURFACE |
| 摘要 |
The invention concerns a method for preparing a lithography mask, comprising: a step which consists in providing patterns (10) on a planar substrate (12), a step which consists in transferring the patterns onto a support (16) having a non-null curvature in at least one point of its surface. |
| 申请公布号 |
WO2005026838(A2) |
申请公布日期 |
2005.03.24 |
| 申请号 |
WO2004FR50433 |
申请日期 |
2004.09.15 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;GUIBERT, JEAN-CHARLES |
发明人 |
GUIBERT, JEAN-CHARLES |
| 分类号 |
B29C59/04;G03F7/00;G03F7/24 |
主分类号 |
B29C59/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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