| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is superior in reliability and has a capacitive element with high precision MIM structure and its manufacturing method. SOLUTION: After forming a lower electrode and an interlayer dielectric (first insulating film) , a capacitive opening region (first opening) is formed and a second insulating film is deposited to form a sidewall on the sidewall of the first opening by overall etching. Then a dielectric film and an upper electrode are formed, thereby, the coverage of the dielectric film at the edge of the capacitive opening can be improved and the poor reliability can be prevented from occurring. COPYRIGHT: (C)2005,JPO&NCIPI
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