Method for fabricating non-volatile memory device having local SONOS structure,申请号KR20020048967-传众专利搜索

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发明名称	Method for fabricating non-volatile memory device having local SONOS structure
摘要
申请公布号	KR100475087(B1)	申请公布日期	2005.03.10
申请号	KR20020048967	申请日期	2002.08.19
申请人		发明人
分类号	H01L21/8247;H01L27/115;H01L21/8246;H01L29/788;H01L29/792;(IPC1-7):H01L27/115	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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