| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for ashing a resist film and its ashing condition calculating system in which an over-etching and an under-etching of a resist cured layer can be reduced, and to provide a device for ashing the resist film. SOLUTION: In a system for calculating ashing conditions 100, the system is used for removing the resist cured layer formed on the crust of the resist film by implantation of impurity ions, and a thickness calculating means which comprises a table A storage 11 and a first calculator 31 calculates a thickness of the resist cured layer based on a type of impurity ions and an acceleration energy when the impurity ions are implanted into the resist film. An ashing conditions calculating means which comprises a table C storage 15 and a third calculator 37 calculates an ashing time for removing the resist cured layer based on a thickness of the resist cured layer calculated by the thickness calculating means. COPYRIGHT: (C)2005,JPO&NCIPI
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