发明名称 |
Method for plasma etching a dielectric layer |
摘要 |
A method of etching a dielectric layer formed on a substrate including a sequence of processing cycles, wherein each cycle comprises steps of depositing an inactive polymeric film, activating the film to etch the structure, and removing the film is disclosed. In one embodiment, the method uses a fluorocarbon gas to form the polymeric film and a substrate bias to activate such film.
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申请公布号 |
US2005048789(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
US20030655231 |
申请日期 |
2003.09.03 |
申请人 |
MERRY WALTER R.;MAK CECILIA Y.;LAW KAM S. |
发明人 |
MERRY WALTER R.;MAK CECILIA Y.;LAW KAM S. |
分类号 |
H01L21/033;H01L21/311;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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