FLASH MEMORY DEVICE AND MANUFACTURING METHOD THEREOF CAPABLE OF ELECTRICALLY ISOLATING MEMORY BLOCKS FROM ONE ANOTHER USING TRENCH OPERATION AND OXIDE LAYER

摘要

PURPOSE: A flash memory device and a manufacturing method thereof are provided to reduce a chip size by reducing a distance between memory blocks by electrically isolating memory blocks from one another using a trench operation and an oxide layer. CONSTITUTION: A flash memory device includes a first substrate(11), a second substrate(13), and a device isolation layer(12). The first substrate includes a plurality of trenches formed in a predetermined pattern thereon. The second substrate is formed in the trench and includes a plurality of memory cells(14) formed in an array thereon. The device isolation layer is formed between the first and second substrates to electrically isolate the first substrate from the second substrate.