METHOD OF ISOLATING SEMICONDUCTOR DEVICE TO UNIFORMLY FORM GATE INSULATING LAYER ON ACTIVE REGION OF SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method of isolating a semiconductor device is provided to form uniformly a gate insulating layer on an active region of a semiconductor substrate by preventing damage of an oxide layer liner at an edge of an upper side of a trench. CONSTITUTION: A trench(15) is formed by etching a field region of a semiconductor substrate by using a mask layer on an active region of a semiconductor substrate(10). An insulating layer liner(17) is deposited on an etched side on the semiconductor substrate within the trench. An oxide layer liner(19) is formed on the etched side on the semiconductor substrate within the trench. An insulating layer is deposited within the trench and is planarized. The mask layer on the active region of the semiconductor substrate is etched to expose a surface of the active region of the semiconductor substrate.