发明名称 |
Heterojunction bipolar transistor |
摘要 |
A method for forming a heterojunction bipolar transistor including the steps of: forming in a semiconductor substrate a collector area of a first doping type; growing by epitaxy above a portion of the collector area a silicon/germanium layer of a second doping type forming a base area; forming above the silicon/germanium layer a sacrificial emitter formed of a material selectively etchable with respect to the silicon/germanium layer and with respect to the layers and consecutively-formed insulating spacers; forming first insulating spacers on the sides of the sacrificial emitter; growing by epitaxy a silicon layer above the exposed portions of the silicon/germanium layer; forming second insulating spacers adjacent to the first spacers and laid on the silicon layer; covering the entire structure with an insulating layer; partially removing the insulating layer above the sacrificial emitter and removing the sacrificial emitter; filling the space previously taken up by the sacrificial emitter with a semiconductor material of the first doping type.
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申请公布号 |
US2005037587(A1) |
申请公布日期 |
2005.02.17 |
申请号 |
US20040914482 |
申请日期 |
2004.08.09 |
申请人 |
STMICROELECTRONICS S.A. |
发明人 |
MARTINET BERTRAND;MARTY MICHEL;CHEVALIER PASCAL;CHANTRE ALAIN |
分类号 |
H01L21/331;H01L29/08;(IPC1-7):H01L21/331;H01L21/822 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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