发明名称
摘要 PROBLEM TO BE SOLVED: To suppress charging damage in plasma processing. SOLUTION: The phases of high-frequency biases applied respectively to a substrate electrode 115 and an antenna electrode 103 opposite with the substrate electrode are controlled to have either of the electrodes serve as the ground at all times.
申请公布号 JP3621900(B2) 申请公布日期 2005.02.16
申请号 JP20010275893 申请日期 2001.09.12
申请人 发明人
分类号 H05H1/46;B01J19/08;B01J19/12;H01L21/302;H01L21/3065 主分类号 H05H1/46
代理机构 代理人
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