Maximum VCC calculation method for hot carrier qualification

摘要

A method of generating an operating condition projection corresponding to a predetermined lifetime for semiconductor devices is disclosed. The disclosed method includes collecting lifetime information from a plurality of semiconductor devices at more than one stress condition by inducing a predetermined drain-source voltage for each stress condition. The method also includes determining the median lifetime for semiconductor devices at each of the stress conditions. Further, the method includes calculating a lifetime at each stress condition at which a predetermined percentage of the devices will exceed and extrapolating the lifetime for devices used at operating conditions.