发明名称 |
Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen |
摘要 |
A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.
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申请公布号 |
US6852614(B1) |
申请公布日期 |
2005.02.08 |
申请号 |
US20010815958 |
申请日期 |
2001.03.23 |
申请人 |
UNIVERSITY OF MAINE |
发明人 |
COMPAAN ALVIN D.;PRICE KENT J.;MA XIANDA;MAKHRATCHEV KONSTANTIN |
分类号 |
H01L21/28;H01L21/363;H01L31/18;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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