METHOD OF IMPROVING GOI EFFECT IN SEMICONDUCTOR FABRICATION PROCESS FOR GENERATING CATHODE ELECTRIFICATION PHENOMENON AND OFFSETTING INTERNAL POTENTIAL DIFFERENCE OF WAFER

摘要

PURPOSE: A method of improving a GOI effect in a semiconductor fabrication process is provided to generate a cathode electrification phenomenon and offset internal potential difference of a wafer by applying an electron scanning process to a surface of a wafer having a potential difference. CONSTITUTION: Electron beams are irradiated on a surface(102) of a wafer in order to reduce internal potential difference of a wafer after a plasma process is finished. Electrons are applied to the surface of the wafer which is electrified to an anode(104) by the plasma process. A surface(110) of the wafer is electrified to a cathode(106) by applying the electrons thereto. The internal potential difference of the wafer is offset by electrifying the surface of the wafer to the cathode.