发明名称 |
Chemical planarization performance for copper/low-k interconnect structures |
摘要 |
An electrical interconnect structure on a substrate, which includes: a first low-k dielectric layer; a spin-on low k CMP protective layer that is covalently bonded to the first low-k dielectric layer; and a CVD deposited hardmask/CMP polish stop layer is provided. Electrical vias and lines can be formed in the first low k dielectric layer. The spin-on low k CMP protective layer prevents damage to the low k dielectric which can be created due to non-uniformity in the CMP process from center to edge or in areas of varying metal density. The thickness of the low-k CMP protective layer can be adjusted to accommodate larger variations in the CMP process without significantly impacting the effective dielectric constant of the structure.
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申请公布号 |
US2005023689(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20030628925 |
申请日期 |
2003.07.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NICHOLSON LEE M.;TSENG WEI-TSU;TYBERG CHRISTY S. |
分类号 |
H01L21/283;H01L21/304;H01L21/31;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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