MAGNETOELECTRIC LAYERED-PEROVSKITE MATERIALS AND ELECTRONIC DEVICES COMPRISING THE PEROVSKITES MATERIALS

摘要

Disclosed herein are the layered perovskites materials having magnetoelectric effects originated from large magnetic moment and ferroelectricity over room temperature. The layered perovskites material is represented by Formula 1 or 2 below: Bi4-xRxTi3O12 (1) Bi4-xRxTi3-yTyO 12 (2) wherein R is a lanthanide series element selected from the group consisting of Nd, Gd, Pr, Pm, Sm, Eu, Er, Tm, Tb, Yb, Dy, Ho, Er, Ce, and mixtures thereof; T is a transition element selected from the group consisting of Co, Ni, Fe, Mn, W, V, Nb, Mo, Ta, Zr and mixtures thereof; x is a number of from 0.1 to 4; and y is a number of from 0.001 to 3. Further disclosed are electronic devices comprising the perovskites materials. Since the perovskites materials have a magnetoelectric effects originated from large magnetic moment and ferroelectricity over room temperature, they can be utilized as various types of parts in electronic devices, including spintronic devices, information storage devices, magnetic-electric sensors, magnetic sensors, electric sensors, optoelectronic devices, microwave electronic devices, transducers, etc.