| 发明名称 |
Preparation of the surface of a slice of semiconductor material by annealing and polishing, to produce a satisfactory surface for subsequent epitaxial growth |
| 摘要 |
<p>The preparation of a surface of a slice of material comprises: (a) a stage of annealing under an oxidising atmosphere, at a temperature of between 1000 and 1300oC for a period of between 1 and 2.5 hours; (b) a stage of polishing with an abrasive with a base of particles of colloidal silica.</p> |
| 申请公布号 |
FR2857895(A1) |
申请公布日期 |
2005.01.28 |
| 申请号 |
FR20030008969 |
申请日期 |
2003.07.23 |
| 申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
RICHTARCH CLAIRE |
| 分类号 |
B24B37/04;H01L21/04;(IPC1-7):B24B37/04;H01L21/304 |
主分类号 |
B24B37/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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